Objectives
The lack of bridges between theory and experiment is one of the major roadblocks impeding the
discovery and development of materials and devices able to respond by design to the needs of specific
applications in harsh environments. For instance, radiation-induced defects and radiation-enhanced diffusion
of metal contact materials in CMOS-based image sensors degrade their performances and drastically reduce
their efficiency (recombination, capture and/or metastable emission centers).

The objectives of this WP are:

1) to define an experimental schema together with its corresponding model counterpart to ensure that the
theoretical picture accurately represents the specificities of the experiment.

2) to develop a modeling framework for Capacitance Transient Spectroscopy (CTS) that enables meaningful
comparison between experimental and theoretical data.

3) to identify specific defects in well-understood semiconductors such as Si, Ge, GaN, GaAs and SiC that
can be exhaustively modeled and measured for mutual comparison of results.

4) to identify the atomic scale mechanisms responsible for the radiation-induced degradation of typical metal-
semiconductor junctions (for instance Cu or Pd on Si) including defect enhanced diffusion.

Lead beneficiary: LAAS